Consider an n-channel MOSFER having widht W, Length L electron mobility in the channel μₙ and oxide capcitance per unit area Cₒₓ. If gate-to-surce voltage Vgs = 0.7 V, drain-to-source voltage Vdx = 0.1 v, (μₙCₒₓ) = 100 μA/V², threshold voltage Wth = 0.3 V and (W/L) = 50, then the transconductance gₘ (in mA/V) is ?